SMG3402 Specs and Replacement
Type Designator: SMG3402
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SC59
SMG3402 substitution
- MOSFET ⓘ Cross-Reference Search
SMG3402 datasheet
smg3402.pdf
SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-... See More ⇒
smg3400.pdf
SMG3400 5.8A, 30V,RDS(ON) 28m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SC-59 A Dim Min Max Description L A 2.70 3.10 The SMG3400 uses advanced trench technology to provide * 3 B 1.40 1.60 S B Top View excellent on-resistance extremely efficient and 2 1 C 1.00 1.30 cost-effectiveness device. D 0.35 0.50 The SMG3400 is uni... See More ⇒
smg3401.pdf
SMG3401 -4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A SC-59 Description L Dim Min Max The SMG3401 uses advanced trench technology 3 A 2.70 3.10 S B Top View to provide excellent on-resistance extremely 2 1 B 1.40 1.60 efficient and cost-effectiveness device. C 1.00 1.30 The ... See More ⇒
smg3407.pdf
SMG3407 -4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Description L Dim Min Max The SMG3407 uses advanced trench technology to 3 A 2.70 3.10 S B Top View provide excellent on-resistance with low gate change. 2 1 B 1.40 1.60 The device is suitable for use as a load switch or in C 1.00 1.30 PWM ... See More ⇒
Detailed specifications: SMG2370N, SMG2371P, SMG2390N, SMG2391P, SMG2398N, SMG2398NE, SMG3400, SMG3401, AON7506, SMG3403, SMG3407, SMG5403, SMG5406, SMG5409, SMS318, SMS4003K, SMS840
Keywords - SMG3402 MOSFET specs
SMG3402 cross reference
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SMG3402 substitution
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History: CRTT029N06N | MS8N60
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