All MOSFET. SMG3402 Datasheet

 

SMG3402 Datasheet and Replacement


   Type Designator: SMG3402
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SC59
 

 SMG3402 substitution

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SMG3402 Datasheet (PDF)

 ..1. Size:819K  secos
smg3402.pdf pdf_icon

SMG3402

SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-

 8.1. Size:416K  secos
smg3400.pdf pdf_icon

SMG3402

SMG34005.8A, 30V,RDS(ON) 28mElektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSC-59ADim Min MaxDescription LA 2.70 3.10The SMG3400 uses advanced trench technology to provide*3B 1.40 1.60SBTop Viewexcellent on-resistance extremely efficient and 2 1C 1.00 1.30cost-effectiveness device.D 0.35 0.50The SMG3400 is uni

 8.2. Size:515K  secos
smg3401.pdf pdf_icon

SMG3402

SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of "-C" specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The

 8.3. Size:512K  secos
smg3407.pdf pdf_icon

SMG3402

SMG3407-4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3407 uses advanced trench technology to 3A 2.70 3.10SBTop Viewprovide excellent on-resistance with low gate change. 2 1B 1.40 1.60The device is suitable for use as a load switch or inC 1.00 1.30PWM

Datasheet: SMG2370N , SMG2371P , SMG2390N , SMG2391P , SMG2398N , SMG2398NE , SMG3400 , SMG3401 , IRFP250 , SMG3403 , SMG3407 , SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 .

History: SFF9240J | GSM4412W | NTD12N10-1G

Keywords - SMG3402 MOSFET datasheet

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