All MOSFET. SMG5409 Datasheet

 

SMG5409 Datasheet and Replacement


   Type Designator: SMG5409
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SC59
 

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SMG5409 Datasheet (PDF)

 ..1. Size:1688K  secos
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SMG5409

SMG5409 -2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION AThe SMG5409 provide the designer with best combination L3of fast switching, low on-resistance and cost-effectiveness. 3The SMG5409 is universally preferred f

 8.1. Size:364K  secos
smg5403.pdf pdf_icon

SMG5409

SMG5403 -2.6A , -30V , RDS(ON) 115 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG5403 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in P

 8.2. Size:1666K  secos
smg5406.pdf pdf_icon

SMG5409

SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG5406 utilized advanced processing ALtechniques to achieve the lowest possible on-resistance, 33extremely efficient and cost-effectiveness device. The To

Datasheet: SMG2398NE , SMG3400 , SMG3401 , SMG3402 , SMG3403 , SMG3407 , SMG5403 , SMG5406 , 18N50 , SMS318 , SMS4003K , SMS840 , SSD02N65 , SSD10N20-400D , SSD12P10 , SSD15N10 , SSD20N06-90D .

History: PZC010BL | SWI110R06VT | NCEP018NH30QU

Keywords - SMG5409 MOSFET datasheet

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