SMG5409 Datasheet and Replacement
Type Designator: SMG5409
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 91 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SC59
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SMG5409 Datasheet (PDF)
smg5409.pdf

SMG5409 -2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION AThe SMG5409 provide the designer with best combination L3of fast switching, low on-resistance and cost-effectiveness. 3The SMG5409 is universally preferred f
smg5403.pdf

SMG5403 -2.6A , -30V , RDS(ON) 115 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG5403 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in P
smg5406.pdf

SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG5406 utilized advanced processing ALtechniques to achieve the lowest possible on-resistance, 33extremely efficient and cost-effectiveness device. The To
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SIHFL9110 | IXTY08N100D2 | NCEP018NH30QU | IRF630FI | STD60NF3LL | SVS11N70MJD2 | SVS60R190SD4
Keywords - SMG5409 MOSFET datasheet
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History: SIHFL9110 | IXTY08N100D2 | NCEP018NH30QU | IRF630FI | STD60NF3LL | SVS11N70MJD2 | SVS60R190SD4



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