All MOSFET. SSD20N10-250D Datasheet

 

SSD20N10-250D Datasheet and Replacement


   Type Designator: SSD20N10-250D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO252
 

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SSD20N10-250D Datasheet (PDF)

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SSD20N10-250D

SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack)These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

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ssd20n10-130d.pdf pdf_icon

SSD20N10-250D

SSD20N10-130D 17A , 100V , RDS(ON) 130m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS

 7.1. Size:145K  secos
ssd20n15-250d.pdf pdf_icon

SSD20N10-250D

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

 8.1. Size:396K  secos
ssd20n06-90d.pdf pdf_icon

SSD20N10-250D

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

Datasheet: SMS318 , SMS4003K , SMS840 , SSD02N65 , SSD10N20-400D , SSD12P10 , SSD15N10 , SSD20N06-90D , 7N60 , SSD20N15-250D , SSD20P06-135D , SSD2504 , SSD2504S , SSD3055 , SSD30N03-40D , SSD30N06-39D , SSD30N10-50D .

History: SSF80R380S2 | IPI70N10S3L-12 | RU30L15H | SIS407ADN | RU40190Q2 | JMSL0302AU | STB42N65M5

Keywords - SSD20N10-250D MOSFET datasheet

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