SSD40N10-30D MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD40N10-30D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 154 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO252
SSD40N10-30D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD40N10-30D Datasheet (PDF)
ssd40n10-30d.pdf
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ssd40p04-20de.pdf
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