SSD40P04-20D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD40P04-20D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 13.9
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 278
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TO252
SSD40P04-20D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD40P04-20D
Datasheet (PDF)
..1. Size:406K secos
ssd40p04-20d.pdf
SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. TO-252(D-Pack)Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
0.1. Size:1555K secos
ssd40p04-20de.pdf
SSD40P04-20DE -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES A Lo
9.1. Size:2414K secos
ssd40n10-30d.pdf
SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. ACB PoE Powered Devices. D Telecom DC/DC converte
9.2. Size:381K secos
ssd40n04-20d.pdf
SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
9.3. Size:1290K secos
ssd40n03.pdf
SSD40N0336A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications
9.4. Size:429K secos
ssd408.pdf
SSD40818A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.