All MOSFET. SSD50P03-09D Datasheet

 

SSD50P03-09D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSD50P03-09D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 SSD50P03-09D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSD50P03-09D Datasheet (PDF)

 ..1. Size:145K  secos
 ssd50p03-09d.pdf

SSD50P03-09D SSD50P03-09D

SSD50P03-09D 61A, -30V, RDS(ON) 9m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme

 9.1. Size:381K  secos
 ssd50n06-15d.pdf

SSD50P03-09D SSD50P03-09D

SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power m

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDG315N

 

 
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