SSG4362N PDF and Equivalents Search

 

SSG4362N Specs and Replacement

Type Designator: SSG4362N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOP8

SSG4362N substitution

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SSG4362N datasheet

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SSG4362N

SSG4362N 18.6 A, 30 V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-po... See More ⇒

 9.1. Size:537K  secos
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SSG4362N

SSG4392N 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES A... See More ⇒

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SSG4362N

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 9.3. Size:491K  secos
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SSG4362N

SSG4394N 6.5A 150V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M ... See More ⇒

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Detailed specifications: SSF1321P, SSF1331P, SSF7400, SSF7401, SSF84W, SSG0410, SSG4224, SSG4228, IRLZ44N, SSG4390N, SSG4392N, SSG4394N, SSG4402N, SSG4407P, SSG4410N, SSG4434N, SSG4435

Keywords - SSG4362N MOSFET specs

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