SSG4394N MOSFET Datasheet: N-Ch, 150V, 6.5A. Full specification with pinout and replacement list

SSG4394N Specs and Replacement

Type Designator: SSG4394N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 260 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

SSG4394N substitution

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SSG4394N datasheet

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SSG4394N 6.5A 150V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M ... See More ⇒

8.1. Size:537K secos
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SSG4392N 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES A... See More ⇒

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SSG4362N 18.6 A, 30 V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-po... See More ⇒

Detailed specifications: SSF7401 , SSF84W , SSG0410 , SSG4224 , SSG4228 , SSG4362N , SSG4390N , SSG4392N , IRFP260N , SSG4402N , SSG4407P , SSG4410N , SSG4434N , SSG4435 , SSG4436N , SSG4462N , SSG4463P .