SSG4434N PDF and Equivalents Search

 

SSG4434N Specs and Replacement

Type Designator: SSG4434N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SOP8

SSG4434N substitution

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SSG4434N datasheet

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SSG4434N

SSG4434N 18.6 A, 30 V, RDS(ON) 7 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L... See More ⇒

 8.1. Size:657K  secos
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SSG4434N

SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal... See More ⇒

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SSG4434N

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SSG4434N

SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒

Detailed specifications: SSG4228, SSG4362N, SSG4390N, SSG4392N, SSG4394N, SSG4402N, SSG4407P, SSG4410N, 10N60, SSG4435, SSG4436N, SSG4462N, SSG4463P, SSG4470STM, SSG4480N, SSG4490N, SSG4492N

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