All MOSFET. SSG4435 Datasheet

 

SSG4435 Datasheet and Replacement


   Type Designator: SSG4435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.8 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

 SSG4435 substitution

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SSG4435 Datasheet (PDF)

 ..1. Size:657K  secos
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SSG4435

SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal

 8.1. Size:475K  secos
ssg4434n.pdf pdf_icon

SSG4435

SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L

 8.2. Size:613K  secos
ssg4436n.pdf pdf_icon

SSG4435

SSG4436N 22A, 30V, RDS(ON) 4.6mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DFEATURES M

 9.1. Size:142K  secos
ssg4462n.pdf pdf_icon

SSG4435

SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

Datasheet: SSG4362N , SSG4390N , SSG4392N , SSG4394N , SSG4402N , SSG4407P , SSG4410N , SSG4434N , IRFB4110 , SSG4436N , SSG4462N , SSG4463P , SSG4470STM , SSG4480N , SSG4490N , SSG4492N , SSG4499P .

History: NTGS3441BT1G | TPA60R330M

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