SSG4435 Specs and Replacement
Type Designator: SSG4435
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23.8 nS
Cossⓘ -
Output Capacitance: 194 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
SSG4435 datasheet
..1. Size:657K secos
ssg4435.pdf 
SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal... See More ⇒
8.1. Size:475K secos
ssg4434n.pdf
SSG4434N 18.6 A, 30 V, RDS(ON) 7 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L... See More ⇒
9.1. Size:142K secos
ssg4462n.pdf
SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒
9.2. Size:168K secos
ssg4499p.pdf
SSG4499P -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES ... See More ⇒
9.3. Size:619K secos
ssg4480n.pdf
SSG4480N 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L D APPLICATIONS M White LED boost converters A C Automotive Systems N I... See More ⇒
9.4. Size:441K secos
ssg4410n.pdf
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-pow... See More ⇒
9.5. Size:542K secos
ssg4407p.pdf
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures B minimal power loss and conserves energy, making this device ideal for use ... See More ⇒
9.6. Size:822K secos
ssg4470stm.pdf
SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. B PRODUCT SUMMARY PRODUCT SUMMARY L D VDSS(V) d RDS(on) m( Max ID(A) 10@VGS= 10V M 40 10 13@VGS= 4.5V A C N K J MARKING H G F E Millime... See More ⇒
9.7. Size:142K secos
ssg4492n.pdf
SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES L... See More ⇒
9.8. Size:596K secos
ssg4402n.pdf
SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒
9.9. Size:144K secos
ssg4490n.pdf
SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal B power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered ... See More ⇒
9.10. Size:620K secos
ssg4463p.pdf
SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L D p... See More ⇒
Detailed specifications: SSG4362N, SSG4390N, SSG4392N, SSG4394N, SSG4402N, SSG4407P, SSG4410N, SSG4434N, AON6414A, SSG4436N, SSG4462N, SSG4463P, SSG4470STM, SSG4480N, SSG4490N, SSG4492N, SSG4499P
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
