All MOSFET. SSG4510 Datasheet

 

SSG4510 Datasheet and Replacement


   Type Designator: SSG4510
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.6(55) nS
   Cossⓘ - Output Capacitance: 60(365) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOP8
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SSG4510 Datasheet (PDF)

 ..1. Size:1078K  secos
ssg4510.pdf pdf_icon

SSG4510

SSG4510 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V, RDS(ON) 112 m Elektronische Bauelemente P-Ch: -2.5A, -100 V, RDS(ON) 180 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4510 provide the designer with the best Bcombination of fast switching, ruggedized device design

 8.1. Size:3292K  secos
ssg4512ce.pdf pdf_icon

SSG4510

SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m Elektronische Bauelemente P-Ch: -5.2 A, -30 V, RDS(ON) 52 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

 9.1. Size:1192K  secos
ssg4503.pdf pdf_icon

SSG4510

SSG4503N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4503 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness.

 9.2. Size:120K  secos
ssg4536c.pdf pdf_icon

SSG4510

SSG4536C N-Ch: 7.1A, 30V, RDS(ON) 28 m P-Ch: -6A, -30V, RDS(ON) 39 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) a

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VS3817GA | AOI2N60 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - SSG4510 MOSFET datasheet

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