SSG4536C Specs and Replacement

Type Designator: SSG4536C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5(2.8) nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

SSG4536C substitution

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SSG4536C datasheet

 ..1. Size:120K  secos
ssg4536c.pdf pdf_icon

SSG4536C

SSG4536C N-Ch 7.1A, 30V, RDS(ON) 28 m P-Ch -6A, -30V, RDS(ON) 39 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) a... See More ⇒

 8.1. Size:738K  secos
ssg4530c.pdf pdf_icon

SSG4536C

SSG4530C N-Ch 5.3A, 30V, RDS(ON) 82 m P-Ch -5.2A, -30V, RDS(ON) 80 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on)... See More ⇒

 9.1. Size:1192K  secos
ssg4503.pdf pdf_icon

SSG4536C

SSG4503 N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o 0.375 REF The SSG4503 provide the designer with the best combination of fast switching, 6.20 5.80 0.25 ruggedized device design, low on-resistance and cost-effectiveness. ... See More ⇒

 9.2. Size:3292K  secos
ssg4512ce.pdf pdf_icon

SSG4536C

SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch 6.9 A, 30 V, RDS(ON) 31 m Elektronische Bauelemente P-Ch -5.2 A, -30 V, RDS(ON) 52 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a B high cell density trench process to provide low RDS(on)... See More ⇒

Detailed specifications: SSG4502C, SSG4502CE, SSG4503, SSG4505, SSG4510, SSG4512CE, SSG4520H, SSG4530C, IRFP260, SSG4542C, SSG4543C, SSG4639STM, SSG4801, SSG4825P, SSG4825PE, SSG4835P, SSG4841P

Keywords - SSG4536C MOSFET specs

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