All MOSFET. SSG4841P Datasheet

 

SSG4841P Datasheet and Replacement


   Type Designator: SSG4841P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

 SSG4841P substitution

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SSG4841P Datasheet (PDF)

 ..1. Size:145K  secos
ssg4841p.pdf pdf_icon

SSG4841P

SSG4841P -9.0 A, -40 V, RDS(ON) 35 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical Bapplicat

 8.1. Size:115K  secos
ssg4842n.pdf pdf_icon

SSG4841P

SSG4842N 23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L DM

 9.1. Size:614K  secos
ssg4835p.pdf pdf_icon

SSG4841P

SSG4835P -9.5 A, -30 V, RDS(ON) 19 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma

 9.2. Size:630K  secos
ssg4874n.pdf pdf_icon

SSG4841P

SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC

Datasheet: SSG4536C , SSG4542C , SSG4543C , SSG4639STM , SSG4801 , SSG4825P , SSG4825PE , SSG4835P , 4435 , SSG4842N , SSG4874N , SSG4890N , SSG4902N , SSG4902NA , SSG4910N , SSG4920N , SSG4930N .

History: SI2305CDS-T1-GE3 | NCEP30T13GU | HM4407 | WNM2046C | HCFL60R290 | SWD4N50K | IRFH5302TRPBF

Keywords - SSG4841P MOSFET datasheet

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