SSG4841P Specs and Replacement

Type Designator: SSG4841P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP8

SSG4841P substitution

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SSG4841P datasheet

 ..1. Size:145K  secos
ssg4841p.pdf pdf_icon

SSG4841P

SSG4841P -9.0 A, -40 V, RDS(ON) 35 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical B applicat... See More ⇒

 8.1. Size:115K  secos
ssg4842n.pdf pdf_icon

SSG4841P

SSG4842N 23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M... See More ⇒

 9.1. Size:614K  secos
ssg4835p.pdf pdf_icon

SSG4841P

SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma... See More ⇒

 9.2. Size:630K  secos
ssg4874n.pdf pdf_icon

SSG4841P

SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC... See More ⇒

Detailed specifications: SSG4536C, SSG4542C, SSG4543C, SSG4639STM, SSG4801, SSG4825P, SSG4825PE, SSG4835P, 5N65, SSG4842N, SSG4874N, SSG4890N, SSG4902N, SSG4902NA, SSG4910N, SSG4920N, SSG4930N

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