All MOSFET. SSG4902N Datasheet

 

SSG4902N Datasheet and Replacement


   Type Designator: SSG4902N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

 SSG4902N substitution

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SSG4902N Datasheet (PDF)

 ..1. Size:169K  secos
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SSG4902N

SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. BTypical applications are DC-DC co

 0.1. Size:330K  secos
ssg4902na.pdf pdf_icon

SSG4902N

SSG4902NA 6.4 A, 60 V, RDS(ON) 41 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) Band to ensure minimal power loss and heat dissipation. Typical applica

 9.1. Size:106K  secos
ssg4940n.pdf pdf_icon

SSG4902N

SSG4940N 8.3A , 40V , RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications

 9.2. Size:145K  secos
ssg4942n.pdf pdf_icon

SSG4902N

SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a

Datasheet: SSG4801 , SSG4825P , SSG4825PE , SSG4835P , SSG4841P , SSG4842N , SSG4874N , SSG4890N , AO4407 , SSG4902NA , SSG4910N , SSG4920N , SSG4930N , SSG4932N , SSG4934N , SSG4935P , SSG4940N .

History: SSG4462N

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