SSG4910N MOSFET. Datasheet pdf. Equivalent
Type Designator: SSG4910N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SOP8
SSG4910N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSG4910N Datasheet (PDF)
ssg4910n.pdf
SSG4910N 10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicati
ssg4940n.pdf
SSG4940N 8.3A , 40V , RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications
ssg4942n.pdf
SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a
ssg4902n.pdf
SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. BTypical applications are DC-DC co
ssg4932n.pdf
SSG4932N 10 A, 30 V, RDS(ON) 13.5 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical Bapplication
ssg4930n.pdf
SSG4930N 5 A, 30 V, RDS(ON) 58 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a
ssg4902na.pdf
SSG4902NA 6.4 A, 60 V, RDS(ON) 41 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) Band to ensure minimal power loss and heat dissipation. Typical applica
ssg4934n.pdf
SSG4934N 8.9 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical
ssg4940nc.pdf
SSG4940NC 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. L DMFEATURES
ssg4953p.pdf
SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) Bassures minimal power loss and conserves energy, making this device ideal for use in po
ssg4990n.pdf
SSG4990N 10 A, 100 V, RDS(ON) 81 mDual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications
ssg4920n.pdf
SSG4920N 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process Low RDS(on) assures minimal power loss and conserves energy, making Bthis device ideal for use in power management
ssg4953.pdf
SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOP-8Description0.190.250.400.90oThe SSG4953 provide the designer with the best Combination of fast switching, 0.375 REFruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.
ssg4935p.pdf
SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves Benergy, making this device ideal for use in power m
Datasheet: SSG4825PE , SSG4835P , SSG4841P , SSG4842N , SSG4874N , SSG4890N , SSG4902N , SSG4902NA , 13N50 , SSG4920N , SSG4930N , SSG4932N , SSG4934N , SSG4935P , SSG4940N , SSG4940NC , SSG4942N .
History: 5N60G-TA3-T
History: 5N60G-TA3-T
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