SSG4920N Specs and Replacement
Type Designator: SSG4920N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
SSG4920N datasheet
..1. Size:401K secos
ssg4920n.pdf 
SSG4920N 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process Low RDS(on) assures minimal power loss and conserves energy, making B this device ideal for use in power management... See More ⇒
9.1. Size:106K secos
ssg4940n.pdf 
SSG4940N 8.3A , 40V , RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications... See More ⇒
9.2. Size:145K secos
ssg4942n.pdf 
SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a... See More ⇒
9.3. Size:169K secos
ssg4902n.pdf 
SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. B Typical applications are DC-DC co... See More ⇒
9.4. Size:146K secos
ssg4932n.pdf 
SSG4932N 10 A, 30 V, RDS(ON) 13.5 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical B application... See More ⇒
9.5. Size:913K secos
ssg4910n.pdf 
SSG4910N 10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicati... See More ⇒
9.6. Size:453K secos
ssg4930n.pdf 
SSG4930N 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a... See More ⇒
9.7. Size:330K secos
ssg4902na.pdf 
SSG4902NA 6.4 A, 60 V, RDS(ON) 41 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) B and to ensure minimal power loss and heat dissipation. Typical applica... See More ⇒
9.8. Size:120K secos
ssg4934n.pdf 
SSG4934N 8.9 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical ... See More ⇒
9.9. Size:575K secos
ssg4940nc.pdf 
SSG4940NC 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a B high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. L D M FEATURES ... See More ⇒
9.10. Size:596K secos
ssg4953p.pdf 
SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) B assures minimal power loss and conserves energy, making this device ideal for use in po... See More ⇒
9.11. Size:146K secos
ssg4990n.pdf 
SSG4990N 10 A, 100 V, RDS(ON) 81 m Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications... See More ⇒
9.12. Size:534K secos
ssg4953.pdf 
SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 o The SSG4953 provide the designer with the best Combination of fast switching, 0.375 REF ruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.... See More ⇒
9.13. Size:458K secos
ssg4935p.pdf 
SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves B energy, making this device ideal for use in power m... See More ⇒
Detailed specifications: SSG4835P, SSG4841P, SSG4842N, SSG4874N, SSG4890N, SSG4902N, SSG4902NA, SSG4910N, AON7506, SSG4930N, SSG4932N, SSG4934N, SSG4935P, SSG4940N, SSG4940NC, SSG4942N, SSG4953
Keywords - SSG4920N MOSFET specs
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