All MOSFET. SSG4932N Datasheet

 

SSG4932N Datasheet and Replacement


   Type Designator: SSG4932N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SOP8
 

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SSG4932N Datasheet (PDF)

 ..1. Size:146K  secos
ssg4932n.pdf pdf_icon

SSG4932N

SSG4932N 10 A, 30 V, RDS(ON) 13.5 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical Bapplication

 8.1. Size:453K  secos
ssg4930n.pdf pdf_icon

SSG4932N

SSG4930N 5 A, 30 V, RDS(ON) 58 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a

 8.2. Size:120K  secos
ssg4934n.pdf pdf_icon

SSG4932N

SSG4934N 8.9 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical

 8.3. Size:458K  secos
ssg4935p.pdf pdf_icon

SSG4932N

SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves Benergy, making this device ideal for use in power m

Datasheet: SSG4842N , SSG4874N , SSG4890N , SSG4902N , SSG4902NA , SSG4910N , SSG4920N , SSG4930N , IRF1407 , SSG4934N , SSG4935P , SSG4940N , SSG4940NC , SSG4942N , SSG4953 , SSG4953P , SSG4990N .

History: RUM003N02T2L | K1109 | SWI4N65DC | SSF4015 | HYG065N15NS1B6 | IRLIZ44NPBF | HYG065N07NS1B

Keywords - SSG4932N MOSFET datasheet

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