All MOSFET. SSG4953 Datasheet

 

SSG4953 Datasheet and Replacement


   Type Designator: SSG4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: SOP8
 

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SSG4953 Datasheet (PDF)

 ..1. Size:534K  secos
ssg4953.pdf pdf_icon

SSG4953

SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOP-8Description0.190.250.400.90oThe SSG4953 provide the designer with the best Combination of fast switching, 0.375 REFruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.

 0.1. Size:596K  secos
ssg4953p.pdf pdf_icon

SSG4953

SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) Bassures minimal power loss and conserves energy, making this device ideal for use in po

 9.1. Size:106K  secos
ssg4940n.pdf pdf_icon

SSG4953

SSG4940N 8.3A , 40V , RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications

 9.2. Size:145K  secos
ssg4942n.pdf pdf_icon

SSG4953

SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: KDS4953 | HUF75531SK8T | DHI029N08 | TPA60R530M | HUFA75343S3ST | IPB530N15N3G

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