SSG9435BDY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSG9435BDY
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20.2
nS
Cossⓘ -
Output Capacitance: 148
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package:
SOP8
SSG9435BDY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSG9435BDY
Datasheet (PDF)
..1. Size:610K secos
ssg9435bdy.pdf
SSG9435BDY -5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free SOP-8 DESCRIPTION The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design, Blow on-resistance and cost-effectiveness. The SOP-8 package is
7.1. Size:3159K secos
ssg9435.pdf
SSG9435P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mElektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all
7.2. Size:628K secos
ssg9435p.pdf
SSG9435P -6.5 A, -30 V, RDS(ON) 49 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat
9.1. Size:581K secos
ssg9475.pdf
SSG94756.9A, 60V,RDS(ON) 40m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG9475 provide the designer with the best Combination of fast switching, 0.375 REF6.20ruggedized device design, Ultra low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred f
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