SSP7436N Specs and Replacement

Type Designator: SSP7436N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: SOP8PP

SSP7436N substitution

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SSP7436N datasheet

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SSP7436N

SSP7436N 24 A, 30 V, RDS(ON) 4.6 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D... See More ⇒

 8.1. Size:143K  secos
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SSP7436N

SSP7438N 22 A, 30 V, RDS(ON) 7.5 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pr... See More ⇒

 8.2. Size:162K  secos
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SSP7436N

SSP7434N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D... See More ⇒

 8.3. Size:162K  secos
 ssp7432n.pdf pdf_icon

SSP7436N

SSP7432N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D... See More ⇒

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Detailed specifications: SSP7200N, SSP7300N, SSP7411P, SSP7421P, SSP7430N, SSP7431P, SSP7432N, SSP7434N, IRLB3034, SSP7438N, SSP7440N, SSP7442N, SSP7460N, SSP7461P, SSP7462N, SSP7464N, SSP7480N

Keywords - SSP7436N MOSFET specs

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