SSPS7321P
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSPS7321P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package: DFN3X38PP
SSPS7321P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSPS7321P
Datasheet (PDF)
..1. Size:519K secos
ssps7321p.pdf 
SSPS7321P -13A , -20V , RDS(ON) 14 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
8.1. Size:585K secos
ssps7332n.pdf
SSPS7332N 17 A , 30 V , RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipat
8.2. Size:590K secos
ssps7331p.pdf
SSPS7331P -13.4 A , -30 V , RDS(ON) 13 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipat
8.3. Size:119K secos
ssps7333p.pdf
SSPS7333P -10.9 A , -30 V , RDS(ON) 20 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipat
8.4. Size:607K secos
ssps7330n.pdf
SSPS7330N 11 A , 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
8.5. Size:506K secos
ssps7334n.pdf
SSPS7334N 17 A , 30 V , RDS(ON) 8.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation
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