SSPS922NE Datasheet and Replacement
Type Designator: SSPS922NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 8.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 87 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: DFN3X38PP
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SSPS922NE Datasheet (PDF)
ssps922ne.pdf

SSPS922NE 8.2 A , 20 V , RDS(ON) 17.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation
ssps924ne.pdf

SSPS924NE 9.2A , 20V , RDS(ON) 12 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CIM6N120-220F | CED05N8 | AON6794 | IRLR024 | UT3N06G-TM3-T | BUZ84 | BL10N70-A
Keywords - SSPS922NE MOSFET datasheet
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History: CIM6N120-220F | CED05N8 | AON6794 | IRLR024 | UT3N06G-TM3-T | BUZ84 | BL10N70-A



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