All MOSFET. STT2605 Datasheet

 

STT2605 Datasheet and Replacement


   Type Designator: STT2605
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TSOP6
 

 STT2605 substitution

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STT2605 Datasheet (PDF)

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STT2605

STT2605-4.0A, -30V,RDS(ON) 80m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionThe STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.The STT2605 is universally used for all commercial-industrial applications.Features* Fast Switch

 8.1. Size:730K  secos
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STT2605

STT26045.5A, 30V,RDS(ON) 45m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionThe STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.The STT2604 is universally used for all commercial-industrial applications.Features* Lower Gate Ch

Datasheet: SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 , SSPS922NE , SSPS924NE , SSU50N10 , STT2604 , IRFB4227 , STT3402N , STT3405P , STT3423P , STT3434N , STT3457P , STT3458N , STT3463P , STT3470N .

History: TT8K1 | 2N65L-TMA-T | BUK452-100B | MTP10N10E | MTP10N10ELG

Keywords - STT2605 MOSFET datasheet

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