STT2605 MOSFET. Datasheet pdf. Equivalent
Type Designator: STT2605
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TSOP6
STT2605 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STT2605 Datasheet (PDF)
stt2605.pdf
STT2605-4.0A, -30V,RDS(ON) 80m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionThe STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.The STT2605 is universally used for all commercial-industrial applications.Features* Fast Switch
stt2604.pdf
STT26045.5A, 30V,RDS(ON) 45m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionThe STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.The STT2604 is universally used for all commercial-industrial applications.Features* Lower Gate Ch
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