STT2605 Specs and Replacement
Type Designator: STT2605
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TSOP6
STT2605 substitution
- MOSFET ⓘ Cross-Reference Search
STT2605 datasheet
stt2605.pdf
STT2605 -4.0A, -30V,RDS(ON) 80m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switch... See More ⇒
stt2604.pdf
STT2604 5.5A, 30V,RDS(ON) 45m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Ch... See More ⇒
Detailed specifications: SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, SSPS924NE, SSU50N10, STT2604, AO3400, STT3402N, STT3405P, STT3423P, STT3434N, STT3457P, STT3458N, STT3463P, STT3470N
Keywords - STT2605 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CS4N80FA9HD | SRC60R360
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