STT3520C Datasheet and Replacement
Type Designator: STT3520C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 23 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12(15) nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: TSOP6
STT3520C substitution
STT3520C Datasheet (PDF)
stt3520c.pdf

STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION These miniature surface mount MOSFETs utilize high cell density Aprocess. Low RDS(on) assures minimal power loss and conserves Ee
stt3585.pdf

STT3585 3.5A, 20V, RDS(ON) 75m-2.5A, -20V, RDS(ON) 160mElektronische Bauelemente N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 The STT3585 provide the designer with best combination Aof fast switching, low on-resistance and cost effectiveness. ELThe TSOP-6 packag
stt3599c.pdf

STT3599C (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize a high cell density Atrench process to provide low RDS(on) and to ensure minimal power
Datasheet: STT3423P , STT3434N , STT3457P , STT3458N , STT3463P , STT3470N , STT3471P , STT3490N , 7N65 , STT3585 , STT3599C , STT3810N , STT3922N , STT3962N , STT3962NE , STT3981 , STT3998N .
History: NCE4558K | DMG9926UDM | IRFHE4250D | IRFIZ14GPBF | 2SK1959 | BUZ102SL-4 | LNG03R031
Keywords - STT3520C MOSFET datasheet
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History: NCE4558K | DMG9926UDM | IRFHE4250D | IRFIZ14GPBF | 2SK1959 | BUZ102SL-4 | LNG03R031



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