FDB5690 Datasheet. Specs and Replacement
Type Designator: FDB5690 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO263AB
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FDB5690 datasheet
fdp5690 fdb5690.pdf
July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V This N-Channel MOSFET has been designed specifically RDS(ON) = 0.032 @ VGS = 6 V. to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev... See More ⇒
fdp5680 fdb5680.pdf
July 2000 FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features 40 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel MOSFET has been designed specifically RDS(ON) = 0.023 @ VGS = 6 V. to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev... See More ⇒
fdb5645 fdp5645.pdf
March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 80 A, 60 V. RDS(ON) = 0.0095 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.011 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Critical DC electrical parameters ... See More ⇒
Detailed specifications: FA38SA50LC, FA57SA50LC, FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, IRF9540N, FDB6030BL, FDB6030L, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L
Keywords - FDB5690 MOSFET specs
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