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FDB6030BL Spec and Replacement


   Type Designator: FDB6030BL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263AB

 FDB6030BL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB6030BL Specs

 ..1. Size:90K  fairchild semi
fdp6030bl fdb6030bl.pdf pdf_icon

FDB6030BL

July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Critical DC elect... See More ⇒

 ..2. Size:203K  onsemi
fdp6030bl fdb6030bl.pdf pdf_icon

FDB6030BL

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf pdf_icon

FDB6030BL

August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr... See More ⇒

 8.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf pdf_icon

FDB6030BL

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic... See More ⇒

Detailed specifications: FA57SA50LC , FB180SA10 , AO3423B , AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , IRF4905 , FDB6030L , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L .

History: IRF222 | E740 | SML80J25 | CS8N80FA9H

Keywords - FDB6030BL MOSFET specs

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