2N60D Specs and Replacement
Type Designator: 2N60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
2N60D datasheet
..1. Size:782K wietron
2n60p 2n60f 2n60i 2n60d.pdf 
2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switche... See More ⇒
0.1. Size:40K 1
hgtp12n60d1.pdf
S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB 12A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time ... See More ⇒
0.2. Size:539K st
std12n60dm2ag.pdf
STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS @ TJmax RDS(on ) max. ID Order code TAB STD12N60DM2AG 650 V 430 m 10 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche test... See More ⇒
0.3. Size:46K harris semi
hgtg12n60d1d.pdf
S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time ... See More ⇒
0.4. Size:386K kec
kf2n60d-i.pdf
KF2N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 power supplies. ... See More ⇒
0.5. Size:333K sisemi
sif2n60d.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N... See More ⇒
0.6. Size:368K sisemi
sif2n60d 1.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS / N-CHANN... See More ⇒
0.7. Size:496K silikron
ssf2n60d.pdf
SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8 (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒
0.8. Size:461K silikron
ssf2n60d2.pdf
SSF2N60D2 Main Product Characteristics VDSS 600V RDS(on) 3.7 (typ.) ID 2A TO-252 Marking a nd pin Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒
0.12. Size:519K silan
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 1 3 TO-252-2L power MOS field effect transistor which is produced using Silan 1 proprietary F-CellTM structure VDMOS technology. The improved 3 1 process and cell structure have been especially tailored to minimize 2 3 1.Gate 2.Dra... See More ⇒
0.13. Size:624K silan
svf2n60m svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s... See More ⇒
0.14. Size:923K goodark
ssf2n60d1.pdf
SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 3.9 (typ.) ID 2A TO-252 Marking and Pin S c he mati c Diag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re... See More ⇒
0.15. Size:193K hy
hy2n60d.pdf
HY2N60D / HY2N60M 600V / 2.0A 600V, RDS(ON)=4.6 @VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mechanical Info... See More ⇒
0.16. Size:669K samwin
swf12n60d.pdf
SW12N60D N-channel Enhanced mode TO-220F MOSFET TO-220F Features BVDSS 600V ID 12A High ruggedness Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 48nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application UPS Inverter PC-POWER 3 1 3 1. Gate 2. Drain 3. Source General Description This power ... See More ⇒
0.17. Size:576K samwin
swd2n60dc swi2n60dc.pdf
SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET BVDSS 600V Features TO-252 TO-251 ID 2A High ruggedness RDS(ON) 3.9 Low RDS(ON) (Typ 3.9 )@VGS=10V Low Gate Charge (Typ9.5nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 2 1 3 2 Application Charger,Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Descripti... See More ⇒
0.18. Size:645K samwin
swf2n60db.pdf
SW2N60DB N-channel Enhanced mode TO-220F MOSFET BVDSS 600V Features TO-220F ID 2A High ruggedness RDS(ON) 3.9 Low RDS(ON) (Typ 3.9 )@VGS=10V Low Gate Charge (Typ 10nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Motor Control Inverter 3 1 1. Gate 2. Drain 3. Source 3 General Description This power... See More ⇒
0.19. Size:739K samwin
sw2n60d.pdf
SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS 600V Features TO-252 TO-251 TO-220F ID 2A High ruggedness RDS(ON) 4.5 RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad... See More ⇒
0.20. Size:710K convert
csfr2n60f csfr2n60p csfr2n60u csfr2n60d.pdf
CSFR2N60F,CSFR2N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR2N60U,CSFR2N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package In... See More ⇒
0.21. Size:470K convert
cs2n60f cs2n60p cs2n60u cs2n60d cs2n60c.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N60F,CS2N60P,CS2N60U,CS2N60D,CS2N60C 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N60F... See More ⇒
0.22. Size:353K cn fx-semi
fxn2n60d.pdf
FuXin Semiconductor Co., Ltd. FXN2N60D Series Rev.A General Description Features The FXN2N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 2.3A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr... See More ⇒
Detailed specifications: STT6802
, SUM6K1N
, SGM0410
, SSD04N65
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, SSM9575
, SST3585
, 2N4003K
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Keywords - 2N60D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
