All MOSFET. 2N60P Datasheet

 

2N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220

2N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N60P Datasheet (PDF)

1.1. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

2N60P
2N60P

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

1.2. ixfn82n60p.pdf Size:152K _ixys

2N60P
2N60P

IXFN 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? 75 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 600 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transie

 1.3. ixfc22n60p.pdf Size:231K _ixys

2N60P
2N60P

IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET ? ? RDS(on) ? 360 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

1.4. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

2N60P
2N60P

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

 1.5. ixfa22n60p3.pdf Size:179K _ixys

2N60P
2N60P

Polar3TM HiperFETTM VDSS = 600V IXFA22N60P3 ID25 = 22A Power MOSFETs IXFP22N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 TO-220AB (IXFP) Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G D Tab S G S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 600 V S VDGR

1.6. ixfl82n60p.pdf Size:205K _ixys

2N60P
2N60P

IXFL 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? 78 m? ? ? ? ? ? ? ISOPLUS264TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISOPLUS264 (IXFL) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G

1.7. ixfb82n60p.pdf Size:101K _ixys

2N60P
2N60P

IXFB 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? ? ? 75 m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 200 ns ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25

1.8. kf12n60p-f.pdf Size:898K _kec

2N60P
2N60P

KF12N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ·VDSS=600V, ID=

1.9. kf2n60p-f.pdf Size:415K _kec

2N60P
2N60P

KF2N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9

1.10. 2n60p 2n60f 2n60i 2n60d.pdf Size:782K _wietron

2N60P
2N60P

2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched m

1.11. ap02n60p-a-hf.pdf Size:56K _a-power

2N60P
2N60P

AP02N60P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V Ў Fast Switching Characteristics RDS(ON) 8? Ў Simple Drive Requirement ID 2A Ў RoHS Compliant & Halogen-Free G D TO-220 S Description D The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited f

1.12. ap02n60p.pdf Size:69K _a-power

2N60P
2N60P

AP02N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Repetitive Avalanche Rated BVDSS 600V ▼ ▼ ▼ ▼Fast Switching RDS(ON) 8Ω ▼ ▼ ▼ ▼Simple Drive Requirement ID 2A ▼ ▼ ▼ ▼ RoHS Compliant ▼ ▼ ▼ G D TO-220 S Description D The TO-220 package is universally preferred for all commerci

1.13. ap02n60p-hf.pdf Size:55K _a-power

2N60P
2N60P

AP02N60P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching Characteristics RDS(ON) 8? Ў Simple Drive Requirement ID 2A G Ў Halogen Free & RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- G industrial applications. The device is suited for

1.14. ftk2n60p f d i.pdf Size:295K _first_silicon

2N60P
2N60P

SEMICONDUCTOR FTK2N60P / F / D / I TECHNICAL DATA 2 Amps, 600 Volts N-CHANNEL MOSFET I : 1 TO - 251 DESCRIPTION The FTK 2N60 is a high voltage MOSFET and is designed to D : have better characteristics, such as fast switching time, low gate 1 TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

1.15. ndt2n60p.pdf Size:1619K _kexin

2N60P
2N60P

DIP Type MOSFET N-Channel MOSFET NDT2N60P Unit:mm TO-251 6.50±0.15 2.30±0.10 5.30±0.10 0.58 (max) 0.43 (min) ■ Features ● VDS (V) = 600V ● ID = 2 A (VGS = 10V) ● RDS(ON) < 4.5Ω (VGS = 10V) 1 2 3 ● Low Gate Charge 0.80±0.10 ● Low Reverse transfer capacitances 0.60±0.10 0.58 (max) 2.30(typ) 0.43 (min) 4.60±0.10 1.20±0.15 ■ Absolute Maximum Ratin

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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