FDB6035L Spec and Replacement
Type Designator: FDB6035L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263AB
FDB6035L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB6035L Specs
fdp6035l fdb6035l.pdf
April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic... See More ⇒
fdp6035al fdb6035al.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒
fdp603al fdb603al.pdf
April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critica... See More ⇒
fdp6030l fdb6030l.pdf
August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr... See More ⇒
Detailed specifications: AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , K3569 , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 , FDC5612 .
History: IRF625 | DSD150N10L3
Keywords - FDB6035L MOSFET specs
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History: IRF625 | DSD150N10L3
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