FDB6035L Datasheet and Replacement
Type Designator: FDB6035L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 34 nC
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263AB
FDB6035L substitution
FDB6035L Datasheet (PDF)
fdp6035l fdb6035l.pdf

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic
fdp6035al fdb6035al.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
fdp603al fdb603al.pdf

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 VRDS(ON) = 0.036 @ VGS=4.5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritica
fdp6030l fdb6030l.pdf

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr
Datasheet: AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , 2SK3568 , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 , FDC5612 .
History: 2SK996
Keywords - FDB6035L MOSFET datasheet
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History: 2SK996



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