All MOSFET. CEB02N6G Datasheet

 

CEB02N6G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB02N6G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO263

CEB02N6G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEB02N6G Datasheet (PDF)

1.1. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEB02N6G
CEB02N6G

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5? 2.2A 10V CEB02N6G 600V 5? 2.2A 10V CEF02N6G 600V 5? 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220

3.1. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEB02N6G
CEB02N6G

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5? 2A 10V CEB02N65G 650V 5.5? 2A 10V CEF02N65G 650V 5.5? 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

3.2. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEB02N6G
CEB02N6G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5? 1.3A 10V CEB02N65A 650V 10.5? 1.3A 10V CEF02N65A 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES

 3.3. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEB02N6G
CEB02N6G

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5? 1.4A 10V CEB02N6A 600V 8.5? 1.4A 10V CEF02N6A 600V 8.5? 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK)

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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