CEB04N7G MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB04N7G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 84 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm
Package: TO263
CEB04N7G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB04N7G Datasheet (PDF)
1.1. cep04n7g ceb04n7g cef04n7g.pdf 
Size:440K _cet
CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N7G 700V 3.3? 4A 10V CEB04N7G 700V 3.3? 4A 10V CEF04N7G 700V 3.3? 4A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-22
4.1. cep04n65 ceb04n65 cef04n65.pdf Size:358K _cet
CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8? 4A 10V CEB04N65 650V 2.8? 4A 10V CEF04N65 650V 2.8? 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-2
4.2. cep04n6 ceb04n6 cef04n6.pdf Size:357K _cet
CEP04N6/CEB04N6 CEF04N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N6 600V 2.4? 4.2A 10V CEB04N6 600V 2.4? 4.2A 10V CEF04N6 600V 2.4? 4.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-2
Datasheet: CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , IRF630 , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A .
