CEB04N7G PDF Specs and Replacement
Type Designator: CEB04N7G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
Package: TO263
CEB04N7G substitution
CEB04N7G PDF Specs
cep04n7g ceb04n7g cef04n7g.pdf
CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N7G 700V 3.3 4A 10V CEB04N7G 700V 3.3 4A 10V CEF04N7G 700V 3.3 4A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA... See More ⇒
cep04n6 ceb04n6 cef04n6.pdf
CEP04N6/CEB04N6 CEF04N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N6 600V 2.4 4.2A 10V CEB04N6 600V 2.4 4.2A 10V CEF04N6 600V 2.4 4.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
cep04n65 ceb04n65 cef04n65.pdf
CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8 4A 10V CEB04N65 650V 2.8 4A 10V CEF04N65 650V 2.8 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
Detailed specifications: CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , IRF640 , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A .
Keywords - CEB04N7G MOSFET specs
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