All MOSFET. CEP02N9 Datasheet

 

CEP02N9 Datasheet and Replacement


   Type Designator: CEP02N9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm
   Package: TO220
 

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CEP02N9 Datasheet (PDF)

 ..1. Size:391K  cet
 cep02n9 ceb02n9 cef02n9.pdf pdf_icon

CEP02N9

CEP02N9/CEB02N9CEF02N9PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N9 900V 6.8 2.6A 10VCEB02N9 900V 6.8 2.6A 10VCEF02N9 900V 6.8 2.6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEP02N9

CEP02N65D/CEB02N65D CEF02N65DPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65D 650V 6.9 2A 10VCEB02N65D 650V 6.9 2A 10VCEF02N65D 650V 6.9 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF S

 8.2. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEP02N9

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES C

 8.3. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEP02N9

CEP02N6G/CEB02N6GCEF02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6G 600V 5 2.2A 10VCEB02N6G 600V 5 2.2A 10VCEF02N6G 600V 5 2.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK

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Datasheet: CEF07N7 , CEP01N65 , CEP01N6G , CEP02N65A , CEP02N65G , CEP02N6A , CEP02N6G , CEP02N7G , 8205A , CEP03N8 , CEP04N6 , CEP04N65 , CEP04N7G , CEP05N65 , CEP06N7 , CEP07N65 , CEP07N65A .

History: NCE60NF040T | TPC8203 | SIE808DF | AP3403GH | HFS2N65S | FQB22P10TM | AP4563GM

Keywords - CEP02N9 MOSFET datasheet

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