All MOSFET. CEP04N7G Equivalents Search

CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N7G 700V 3.3 4A 10V CEB04N7G 700V 3.3 4A 10V CEF04N7G 700V 3.3 4A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA... See More ⇒

CEP04N6/CEB04N6 CEF04N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N6 600V 2.4 4.2A 10V CEB04N6 600V 2.4 4.2A 10V CEF04N6 600V 2.4 4.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒

CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8 4A 10V CEB04N65 650V 2.8 4A 10V CEF04N65 650V 2.8 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m... See More ⇒

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒

http //www.ncepower.com NCEP048NH150D NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge... See More ⇒

NCEP040NH150LL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =265A DS D uniquely optimized to provide the most efficient high frequency R =3.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate char... See More ⇒

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr... See More ⇒

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒

http //www.ncepower.com NCEP045N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP045N10G uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒

http //www.ncepower.com NCEP048N72 NCE N-Channel Super Trench Power MOSFET Description The NCEP048N72 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒

NCEP045N85GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =110A switching performance. Both conduction and switching power RDS(ON)=4.1m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

http //www.ncepower.com NCEP040N85G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85G uses Super Trench II technology that is V =85V,I =120A DS D uniquely optimized to provide the most efficient high frequency R =3.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc... See More ⇒

http //www.ncepower.com NCEP040N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85GU uses Super Trench II technology that is V =85V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extrem... See More ⇒

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

NCEP048NH150T http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =223A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Ex... See More ⇒

NCEP040N10M,NCEP040N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG... See More ⇒

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒

NCEP045N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =150A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio... See More ⇒

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

NCEP045N10M,NCEP045N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-2... See More ⇒

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr... See More ⇒

NCEP045N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =110A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio... See More ⇒

NCEP045N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =60A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical@ VGS=10V losses are minimized due to an extremely low combination o... See More ⇒

http //www.ncepower.com NCEP040N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N10GU uses Super Trench II technology that is V =100V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =3.6m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

http //www.ncepower.com NCEP048NH150 NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge ... See More ⇒

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒