CEP07N65 Specs and Replacement
Type Designator: CEP07N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ -
Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
CEP07N65 datasheet
..1. Size:432K cet
cep07n65 ceb07n65 cef07n65.pdf 
CEP07N65/CEB07N65 CEF07N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP07N65 650V 1.3 7A 10V CEB07N65 650V 1.3 7A 10V CEF07N65 650V 1.3 7A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
0.1. Size:375K cet
cep07n65a ceb07n65a cef07n65a.pdf
CEP07N65A/CEB07N65A CEF07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP07N65A 650V 1.45 7A 10V CEB07N65A 650V 1.45 7A 10V CEF07N65A 650V 1.45 7A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒
8.1. Size:434K cet
cep07n7 ceb07n7 cef07n7.pdf
CEP07N7/CEB07N7 CEF07N7 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP07N7 700V 1.5 6.6A 10V CEB07N7 700V 1.5 6.6A 10V CEF07N7 700V 1.5 6.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
9.1. Size:331K ncepower
ncep075n85agu.pdf
NCEP075N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz... See More ⇒
9.2. Size:760K ncepower
ncep075n85gu.pdf
NCEP075N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =75A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combinati... See More ⇒
9.3. Size:305K ncepower
ncep072n10.pdf
http //www.ncepower.com NCEP072N10 NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p... See More ⇒
9.4. Size:397K ncepower
ncep070n10agu.pdf
NCEP070N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz... See More ⇒
9.5. Size:335K ncepower
ncep070n12.pdf
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26... See More ⇒
9.6. Size:335K ncepower
ncep070n12 ncep070n12d.pdf
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26... See More ⇒
9.7. Size:335K ncepower
ncep070n12d.pdf
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26... See More ⇒
9.8. Size:462K ncepower
ncep078n10ak.pdf
NCEP078N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4m , typical@ VGS=4.5V losses are minimized... See More ⇒
9.9. Size:627K ncepower
ncep072n10a.pdf
http //www.ncepower.com NCEP072N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10A uses Super Trench II technology that is V =100V,I =88A DS D uniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5V DS(ON) GS... See More ⇒
9.10. Size:377K ncepower
ncep070n10gu.pdf
NCEP070N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒
9.11. Size:428K ncepower
ncep078n10ag.pdf
NCEP078N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.2m , typical@ VGS=4.5V losses are minimized... See More ⇒
9.12. Size:1009K ncepower
ncep078n10g.pdf
NCEP078N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =75A DS D switching performance. Both conduction and switching power R =7.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combination... See More ⇒
Detailed specifications: CEP02N7G, CEP02N9, CEP03N8, CEP04N6, CEP04N65, CEP04N7G, CEP05N65, CEP06N7, 12N60, CEP07N65A, CEP07N7, CEB13N5A, CEF13N5A, CEP13N5A, CEB08N8, CEF08N8, CEP08N8
Keywords - CEP07N65 MOSFET specs
CEP07N65 cross reference
CEP07N65 equivalent finder
CEP07N65 pdf lookup
CEP07N65 substitution
CEP07N65 replacement
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