All MOSFET. CEF08N8 Datasheet

 

CEF08N8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF08N8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm

Package: TO220F

CEF08N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEF08N8 Datasheet (PDF)

1.1. cep08n8 ceb08n8 cef08n8.pdf Size:434K _cet

CEF08N8
CEF08N8

CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55? 8A 10V CEB08N8 800V 1.55? 8A 10V CEF08N8 800V 1.55? 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

4.1. cep08n6a ceb08n6a cef08n6a.pdf Size:375K _cet

CEF08N8
CEF08N8

CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25? 7.5A 10V CEB08N6A 600V 1.25? 7.5A 10V CEF08N6A 600V 1.25? 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES

 

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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