CEF08N8 MOSFET Datasheet: N-Ch, 800V, 8A. Full specification with pinout and replacement list

CEF08N8 Specs and Replacement

   Type Designator: CEF08N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO220F

CEF08N8 substitution

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CEF08N8 datasheet

..1. Size:434K cet
cep08n8 ceb08n8 cef08n8.pdf pdf_icon

CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55 8A 10V CEB08N8 800V 1.55 8A 10V CEF08N8 800V 1.55 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

8.1. Size:375K cet
cep08n6a ceb08n6a cef08n6a.pdf pdf_icon

CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25 7.5A 10V CEB08N6A 600V 1.25 7.5A 10V CEF08N6A 600V 1.25 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒

Detailed specifications: CEP06N7 , CEP07N65 , CEP07N65A , CEP07N7 , CEB13N5A , CEF13N5A , CEP13N5A , CEB08N8 , NCEP15T14 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 , CEP14G04 , CEB15A03 , CEP15A03 , CEB14A04 .