CEB13N10L Datasheet and Replacement. Cross Reference Search

CEB13N10L Datasheet (PDF)

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CEP13N10L/CEB13N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS

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CEP13N10/CEB13N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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CEP13N5A/CEB13N5ACEF13N5APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5A 500V 0.48 13A 10VCEB13N5A 500V 0.48 13A 10VCEF13N5A 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

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CEP13N5/CEB13N5 CEF13N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5 500V 0.48 13A 10VCEB13N5 500V 0.48 13A 10VCEF13N5 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

Datasheet: CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , 75N75 , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 , CEB13N5 , CEP13N5 .