All MOSFET. CEB13N10 Datasheet

 

CEB13N10 Datasheet and Replacement


   Type Designator: CEB13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 12.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO263
 
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CEB13N10 Datasheet (PDF)

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 cep13n10 ceb13n10.pdf pdf_icon

CEB13N10

CEP13N10/CEB13N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 0.1. Size:657K  cet
 cep13n10l ceb13n10l.pdf pdf_icon

CEB13N10

CEP13N10L/CEB13N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS

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 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEB13N10

CEP13N5A/CEB13N5ACEF13N5APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5A 500V 0.48 13A 10VCEB13N5A 500V 0.48 13A 10VCEF13N5A 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

 8.2. Size:412K  cet
 cep13n5 ceb13n5 cef13n5.pdf pdf_icon

CEB13N10

CEP13N5/CEB13N5 CEF13N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5 500V 0.48 13A 10VCEB13N5 500V 0.48 13A 10VCEF13N5 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

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Keywords - CEB13N10 MOSFET datasheet

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