CEB13N10 Specs and Replacement
Type Designator: CEB13N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
CEB13N10 substitution
- MOSFET ⓘ Cross-Reference Search
CEB13N10 datasheet
cep13n10 ceb13n10.pdf
CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒
cep13n10l ceb13n10l.pdf
CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS... See More ⇒
cep13n5a ceb13n5a cef13n5a.pdf
CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒
cep13n5 ceb13n5 cef13n5.pdf
CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48 13A 10V CEB13N5 500V 0.48 13A 10V CEF13N5 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
Detailed specifications: CEB140N10, CEP140N10, CEB16N10L, CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, CEP13N10L, IRF520, CEP13N10, CEB14N5, CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5, CEF12N5
Keywords - CEB13N10 MOSFET specs
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