CEB10N6 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB10N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44 nC
trⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO263
CEB10N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB10N6 Datasheet (PDF)
cep10n6 ceb10n6 cef10n6.pdf
CEP10N6/CEB10N6 CEF10N6N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N6 600V 0.75 10A 10VCEB10N6 600V 0.75 10A 10VCEF10N6 600V 0.75 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PA
cep10n65 ceb10n65 cef10n65.pdf
CEP10N65/CEB10N65CEF10N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP10N65 650V 0.85 10A 10VCEB10N65 650V 0.85 10A 10VCEF10N65 650V 0.85 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CE
cep10n4 ceb10n4 cei10n4 cef10n4.pdf
CEP10N4/CEB10N4CEI10N4/CEF10N4N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N4 450V 0.7 10A 10VCEB10N4 450V 0.7 10A 10VCEI10N4 450V 0.7 10A 10VCEF10N4 450V 0.7 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918