CEF08N6A Specs and Replacement
Type Designator: CEF08N6A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220F
CEF08N6A substitution
- MOSFET ⓘ Cross-Reference Search
CEF08N6A datasheet
cep08n6a ceb08n6a cef08n6a.pdf
CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25 7.5A 10V CEB08N6A 600V 1.25 7.5A 10V CEF08N6A 600V 1.25 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒
cep08n8 ceb08n8 cef08n8.pdf
CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55 8A 10V CEB08N8 800V 1.55 8A 10V CEF08N8 800V 1.55 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
Detailed specifications: CEF10N4, CEB10N6, CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, CEP09N7G, CEB08N6A, AO4407A, CEP08N6A, CEF1186, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2
Keywords - CEF08N6A MOSFET specs
CEF08N6A cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
