CEB1195 Datasheet and Replacement
Type Designator: CEB1195
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.75 Ohm
Package: TO263
CEB1195 substitution
CEB1195 Datasheet (PDF)
cep1195 ceb1195 cef1195.pdf
CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
ceb110p03 cep110p03.pdf
CEP110P03/CEB110P03P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -105.5A, RDS(ON) =5.8m @VGS = -10V.RDS(ON) =8.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABS
cep1186 ceb1186 cef1186.pdf
CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
Datasheet: CEF09N7G , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , IRFZ44N , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , CEB4060A .
Keywords - CEB1195 MOSFET datasheet
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