CEB50N10 Specs and Replacement

Type Designator: CEB50N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO263

CEB50N10 substitution

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CEB50N10 datasheet

 ..1. Size:446K  cet
 cep50n10 ceb50n10.pdf pdf_icon

CEB50N10

CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

 8.1. Size:370K  cet
 cep50n06 ceb50n06.pdf pdf_icon

CEB50N10

CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒

 9.1. Size:128K  cet
 cep50p03 ceb50p03.pdf pdf_icon

CEB50N10

CEP50P03/CEB50P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒

 9.2. Size:811K  cn vbsemi
 ceb50p03.pdf pdf_icon

CEB50N10

CEB50P03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = - 10 V - 75 100 % Rg Tested RoHS - 30 56 nC COMPLIANT 100 % UIS Tested 0.011 at VGS = - 4.5 V - 65 APPLICATIONS Load Switch Notebook Adaptor Switch S D2PAK (TO-263) G D G S D P... See More ⇒

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Detailed specifications: CEB21A2, CEB3060, CEB30N15L, CEB3120, CEB3205, CEB4060A, CEB4060AL, CEB45N10, IRF1404, CEB540L, CEB540N, CEB6036, CEB6042, CEB6056, CEB6060L, CEB6060N, CEB6086L

Keywords - CEB50N10 MOSFET specs

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