CEP30N15L PDF and Equivalents Search

 

CEP30N15L Specs and Replacement


   Type Designator: CEP30N15L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO220
 

 CEP30N15L substitution

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CEP30N15L datasheet

 ..1. Size:415K  cet
cep30n15l ceb30n15l.pdf pdf_icon

CEP30N15L

CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS T... See More ⇒

 8.1. Size:362K  cet
ceb30n3 cef30n3 cep30n3.pdf pdf_icon

CEP30N15L

CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP30N3 300V 110m 30A 10V CEB30N3 300V 110m 30A 10V CEF30N3 300V 110m 30A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERI... See More ⇒

 9.1. Size:408K  cet
cep3060 ceb3060.pdf pdf_icon

CEP30N15L

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒

 9.2. Size:394K  cet
cep30p03 ceb30p03.pdf pdf_icon

CEP30N15L

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32m @VGS = -10V. RDS(ON) =50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒

Detailed specifications: CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , 7N65 , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L .

Keywords - CEP30N15L MOSFET specs

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