CEP30N15L Specs and Replacement
Type Designator: CEP30N15L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 30
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 245
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO220
-
MOSFET ⓘ Cross-Reference Search
CEP30N15L datasheet
..1. Size:415K cet
cep30n15l ceb30n15l.pdf 
CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS T... See More ⇒
8.1. Size:362K cet
ceb30n3 cef30n3 cep30n3.pdf 
CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP30N3 300V 110m 30A 10V CEB30N3 300V 110m 30A 10V CEF30N3 300V 110m 30A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERI... See More ⇒
9.1. Size:408K cet
cep3060 ceb3060.pdf 
CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
9.2. Size:394K cet
cep30p03 ceb30p03.pdf 
CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32m @VGS = -10V. RDS(ON) =50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒
9.3. Size:372K ncepower
ncep3085eg.pdf 
Pb Free Product http //www.ncepower.com NCEP3085EG NCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
9.4. Size:602K ncepower
ncep30p90k.pdf 
http //www.ncepower.com NCEP30P90K NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi... See More ⇒
9.5. Size:506K ncepower
ncep3065qu.pdf 
http //www.ncepower.com NCEP3065QU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi... See More ⇒
9.6. Size:1031K ncepower
ncep30t17gu.pdf 
Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig... See More ⇒
9.7. Size:366K ncepower
ncep30t17g.pdf 
Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
9.8. Size:332K ncepower
ncep3060eq.pdf 
Pb Free Product http //www.ncepower.com NCEP3060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
9.9. Size:330K ncepower
ncep3090gu.pdf 
Pb Free Product http //www.ncepower.com NCEP3090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
9.10. Size:725K ncepower
ncep30t21gu.pdf 
http //www.ncepower.com NCEP30T21GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T21GU uses Super Trench technology that is V =30V,I =210A DS D uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5V DS(ON) GS switching power lo... See More ⇒
9.11. Size:324K ncepower
ncep3045bgu.pdf 
http //www.ncepower.com NCEP3045BGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los... See More ⇒
9.12. Size:325K ncepower
ncep30pt16g.pdf 
http //www.ncepower.com NCEP30PT16G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse... See More ⇒
9.13. Size:783K ncepower
ncep30t22gu.pdf 
http //www.ncepower.com NCEP30T22GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T22GU uses Super Trench technology that is V =30V,I =220A DS D uniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5V DS(ON) GS switching power lo... See More ⇒
9.14. Size:361K ncepower
ncep30t19g.pdf 
Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
9.15. Size:366K ncepower
ncep30t12g.pdf 
Pb Free Product http //www.ncepower.com NCEP30T12G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
9.16. Size:332K ncepower
ncep30p90g.pdf 
http //www.ncepower.com NCEP30P90G NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
9.17. Size:510K ncepower
ncep3065bqu.pdf 
http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒
9.18. Size:347K ncepower
ncep3045gu.pdf 
Pb Free Product http //www.ncepower.com NCEP3045GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
9.19. Size:352K ncepower
ncep30t15gu.pdf 
http //www.ncepower.com NCEP30T15GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
9.20. Size:469K ncepower
ncep30t13gu.pdf 
http //www.ncepower.com NCEP30T13GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss... See More ⇒
9.21. Size:325K ncepower
ncep3040q.pdf 
http //www.ncepower.com NCEP3040Q NCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒
Detailed specifications: CEB6060L
, CEB6060N
, CEB6086L
, CEB60N06G
, CEB60N10
, CEB6186
, CEP21A2
, CEP3060
, 7N65
, CEP3100
, CEP3120
, CEP3205
, CEP4060A
, CEP4060AL
, CEP45N10
, CEP50N10
, CEP540L
.
Keywords - CEP30N15L MOSFET specs
CEP30N15L cross reference
CEP30N15L equivalent finder
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