All MOSFET. CEP6042 Equivalents Search

CEP6042/CEB6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 118A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒

http //www.ncepower.com NCEP6040AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6040AGU uses Super Trench technology that is VDS =60V,ID =40A uniquely optimized to provide the most efficient high RDS(ON)=10m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=13m (typical) @ VGS=4.5V switching power losses are mi... See More ⇒

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒

CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

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CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE ... See More ⇒

CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par... See More ⇒

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot... See More ⇒

http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O... See More ⇒

http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c... See More ⇒

http //www.ncepower.com NCEP6090 NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin... See More ⇒

http //www.ncepower.com NCEP6090D NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =90A DS D switching performance. Both conduction and switching power R =6.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP6080G NCE N-Channel Super Trench Power MOSFET Description The NCEP6080G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒

http //www.ncepower.com NCEP6035AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =35A DS D frequency switching performance. Both conduction and R =10.0m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low... See More ⇒

http //www.ncepower.com NCEP6090AK NCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒

http //www.ncepower.com NCEP60ND30AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

http //www.ncepower.com NCEP6012AS NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6012AS uses Super Trench technology that is VDS =60V,ID =12A uniquely optimized to provide the most efficient high RDS(ON)=12.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=14.5m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

http //www.ncepower.com NCEP60T20LL NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒

http //www.ncepower.com NCEP6090K NCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒

http //www.ncepower.com NCEP6035AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T20D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high... See More ⇒

Pb Free Product http //www.ncepower.com NCEP6020AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O... See More ⇒

Pb Free Product http //www.ncepower.com NCEP6016AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6016AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T20 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒

http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T18A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

http //www.ncepower.com NCEP6015AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

http //www.ncepower.com NCEP6060AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit... See More ⇒

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Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O... See More ⇒

http //www.ncepower.com NCEP6090AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T20T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

Pb Free Product http //www.ncepower.com NCEP60T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

http //www.ncepower.com NCEP60T12T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

http //www.ncepower.com NCEP6055AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6055AGU uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS(ON) GS l... See More ⇒

http //www.ncepower.com NCEP60ND60G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND60G uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switchi... See More ⇒

http //www.ncepower.com NCEP60T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

Pb Free Product NCEP60T12AD http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =120A DS D frequency switching performance. Both conduction and R ... See More ⇒