All MOSFET. CEF80N15 Datasheet

 

CEF80N15 Datasheet and Replacement


   Type Designator: CEF80N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO220F
 

 CEF80N15 substitution

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CEF80N15 Datasheet (PDF)

 ..1. Size:420K  cet
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CEF80N15

CEP80N15/CEB80N15CEF80N15N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP80N15 150V 19m 76A 10VCEB80N15 150V 19m 76A 10VCEF80N15 150V 19m 76A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 & TO-263 & TO-220F full-pak

Datasheet: CEP6086L , CEP60N06G , CEP60N10 , CEP6186 , CEF630N , CEF730G , CEF740A , CEF740G , IRLZ44N , CEF830G , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G .

History: NCE60N640I | CEB14P20 | STF8NK85Z | SSF2610E | APT60M80L2VRG | TPCA8027-H | FTK9451

Keywords - CEF80N15 MOSFET datasheet

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