CEF840G Datasheet and Replacement
Type Designator: CEF840G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
CEF840G substitution
CEF840G Datasheet (PDF)
cep840g ceb840g cef840g.pdf
CEP840G/CEB840G CEF840GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP840G 500V 0.85 8A 10VCEB840G 500V 0.85 8A 10VCEF840G 500V 0.85 8A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-2
cep840a ceb840a cef840a.pdf
CEP840A/CEB840ACEF840APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP840A 500V 0.85 8.5A 10VCEB840A 500V 0.85 8.5A 10VCEF840A 500V 0.85 8.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF
cep840l ceb840l cef840l.pdf
CEP840L/CEB840L CEF840LN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP840L 500V 0.8 8A 10VCEB840L 500V 0.8 8A 10VCEF840L 500V 0.8 8A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(
Datasheet: CEP6186 , CEF630N , CEF730G , CEF740A , CEF740G , CEF80N15 , CEF830G , CEF840A , NCEP15T14 , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 .
Keywords - CEF840G MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CEF730G | CEP6036
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