All MOSFET. CEB730G Datasheet

 

CEB730G Datasheet and Replacement


   Type Designator: CEB730G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO263
 

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CEB730G Datasheet (PDF)

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 cep730g ceb730g cef730g.pdf pdf_icon

CEB730G

CEP730G/CEB730G CEF730GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP730G 400V 1 5.5A 10VCEB730G 400V 1 5.5A 10VCEF730G 400V 1 5.5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

 9.1. Size:394K  cet
 cep73a3g ceb73a3g.pdf pdf_icon

CEB730G

CEP73A3G/CEB73A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 62A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM R

Datasheet: CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , IRFZ24N , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , CEB80N15 .

History: APM4356KP | MTM6N90 | RU2520H

Keywords - CEB730G MOSFET datasheet

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