All MOSFET. CEB730G Datasheet

 

CEB730G MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEB730G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO263

 CEB730G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB730G Datasheet (PDF)

 ..1. Size:414K  cet
 cep730g ceb730g cef730g.pdf

CEB730G CEB730G

CEP730G/CEB730G CEF730GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP730G 400V 1 5.5A 10VCEB730G 400V 1 5.5A 10VCEF730G 400V 1 5.5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

 9.1. Size:394K  cet
 cep73a3g ceb73a3g.pdf

CEB730G CEB730G

CEP73A3G/CEB73A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 62A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1647S

 

 
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