CEB730G Specs and Replacement
Type Designator: CEB730G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO263
CEB730G substitution
- MOSFET ⓘ Cross-Reference Search
CEB730G datasheet
cep730g ceb730g cef730g.pdf
CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1 5.5A 10V CEB730G 400V 1 5.5A 10V CEF730G 400V 1 5.5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒
cep73a3g ceb73a3g.pdf
CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: CEF740G, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L, CEF85N75, CEB630N, TK10A60D, CEB73A3G, CEB740A, CEB740G, CEB75A3, CEB75N06, CEB75N06G, CEB75N10, CEB80N15
Keywords - CEB730G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
