All MOSFET. CEB830G Datasheet

 

CEB830G Datasheet and Replacement


   Type Designator: CEB830G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO263
 

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CEB830G Datasheet (PDF)

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 cep830g ceb830g cef830g.pdf pdf_icon

CEB830G

CEP830G/CEB830G CEF830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP830G 500V 1.5 5A 10VCEB830G 500V 1.5 5A 10VCEF830G 500V 1.5 5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

 9.1. Size:396K  cet
 cep83a3g ceb83a3g.pdf pdf_icon

CEB830G

CEP83A3G/CEB83A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 102A, RDS(ON) = 4.2 m @VGS = 10V. RDS(ON) = 6.2 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE

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 cep83a3 ceb83a3.pdf pdf_icon

CEB830G

CEP83A3/CEB83A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T

Datasheet: CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , CEB80N15 , RFP50N06 , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L , CEB84A4 , CEB85A3 , CEB85N75 .

Keywords - CEB830G MOSFET datasheet

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