CEB840A Specs and Replacement

Type Designator: CEB840A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO263

CEB840A substitution

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CEB840A datasheet

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 cep840a ceb840a cef840a.pdf pdf_icon

CEB840A

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85 8.5A 10V CEB840A 500V 0.85 8.5A 10V CEF840A 500V 0.85 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF ... See More ⇒

 8.1. Size:396K  cet
 cep840l ceb840l cef840l.pdf pdf_icon

CEB840A

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8 8A 10V CEB840L 500V 0.8 8A 10V CEF840L 500V 0.8 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

 8.2. Size:398K  cet
 cep840g ceb840g cef840g.pdf pdf_icon

CEB840A

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85 8A 10V CEB840G 500V 0.85 8A 10V CEF840G 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-2... See More ⇒

 9.1. Size:393K  cet
 cep84a4 ceb84a4.pdf pdf_icon

CEB840A

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒

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Detailed specifications: CEB75A3, CEB75N06, CEB75N06G, CEB75N10, CEB80N15, CEB830G, CEB83A3, CEB83A3G, 18N50, CEB840G, CEB840L, CEB84A4, CEB85A3, CEB85N75, CEB85N75V, CEB9060N, CEP630N

Keywords - CEB840A MOSFET specs

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