CEB840G Specs and Replacement

Type Designator: CEB840G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO263

CEB840G substitution

- MOSFET ⓘ Cross-Reference Search

 

CEB840G datasheet

 ..1. Size:398K  cet
 cep840g ceb840g cef840g.pdf pdf_icon

CEB840G

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85 8A 10V CEB840G 500V 0.85 8A 10V CEF840G 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-2... See More ⇒

 8.1. Size:435K  cet
 cep840a ceb840a cef840a.pdf pdf_icon

CEB840G

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85 8.5A 10V CEB840A 500V 0.85 8.5A 10V CEF840A 500V 0.85 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF ... See More ⇒

 8.2. Size:396K  cet
 cep840l ceb840l cef840l.pdf pdf_icon

CEB840G

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8 8A 10V CEB840L 500V 0.8 8A 10V CEF840L 500V 0.8 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

 9.1. Size:393K  cet
 cep84a4 ceb84a4.pdf pdf_icon

CEB840G

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒

SHOW MORE

Detailed specifications: CEB75N06, CEB75N06G, CEB75N10, CEB80N15, CEB830G, CEB83A3, CEB83A3G, CEB840A, 20N50, CEB840L, CEB84A4, CEB85A3, CEB85N75, CEB85N75V, CEB9060N, CEP630N, CEP730G

Keywords - CEB840G MOSFET specs

 CEB840G cross reference

 CEB840G equivalent finder

 CEB840G pdf lookup

 CEB840G substitution

 CEB840G replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs