All MOSFET. CEP9060N Datasheet

 

CEP9060N Datasheet and Replacement


   Type Designator: CEP9060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.9 nS
   Cossⓘ - Output Capacitance: 765 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO220
 

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CEP9060N Datasheet (PDF)

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CEP9060N

CEP9060N/CEB9060N CEF9060NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP9060N 55V 10.5m 90A 10VCEB9060N 55V 10.5m 90A 10VCEF9060N 55V 10.5m 90A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for

Datasheet: CEP83A3G , CEP840A , CEP840G , CEP840L , CEP84A4 , CEP85A3 , CEP85N75 , CEP85N75V , IRFB7545 , CEP93A3 , CEBF634 , CEBF640 , CED01N65 , CED01N65A , CED01N6G , CED01N7 , CED02N65A .

History: JCS4N90RH | IRF3709ZL

Keywords - CEP9060N MOSFET datasheet

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