CEP9060N Specs and Replacement

Type Designator: CEP9060N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.9 nS

Cossⓘ - Output Capacitance: 765 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220

CEP9060N substitution

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CEP9060N datasheet

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CEP9060N

CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP9060N 55V 10.5m 90A 10V CEB9060N 55V 10.5m 90A 10V CEF9060N 55V 10.5m 90A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for ... See More ⇒

Detailed specifications: CEP83A3G, CEP840A, CEP840G, CEP840L, CEP84A4, CEP85A3, CEP85N75, CEP85N75V, 60N06, CEP93A3, CEBF634, CEBF640, CED01N65, CED01N65A, CED01N6G, CED01N7, CED02N65A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.